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SQD30N05-20L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQD30N05-20L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page ![]() SQD30N05-20L www.vishay.com Vishay Siliconix S12-1846-Rev. C, 30-Jul-12 1 Document Number: 67054 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 55 V (D-S) 175 °C MOSFET FEATURES •TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) 30 Configuration Single D G S N-Channel MOSFET TO-252 S GD Top View Drain Connected to Tab ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD30N05-20L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID 30 A TC = 125 °C 19 Continuous Source Current (Diode Conduction)a IS 30 Pulsed Drain Currentb IDM 120 Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipationb TC = 25 °C PD 50 W TC = 125 °C 16 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 60 °C/W Junction-to-Case (Drain) RthJC 3 |
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