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CY7C1440AV33 Datasheet(PDF) 21 Page - Cypress Semiconductor |
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CY7C1440AV33 Datasheet(HTML) 21 Page - Cypress Semiconductor |
21 / 33 page CY7C1440AV33 Document Number: 38-05383 Rev. *K Page 21 of 33 Switching Characteristics Over the Operating Range Parameter [20, 21] Description -250 -167 Unit Min Max Min Max tPOWER VDD(typical) to the first access [22] 1 –1– ms Clock tCYC Clock cycle time 4.0 – 6 – ns tCH Clock HIGH 1.5 – 2.4 – ns tCL Clock LOW 1.5 – 2.4 – ns Output Times tCO Data output valid after CLK rise – 2.6 – 3.4 ns tDOH Data output hold after CLK rise 1.0 – 1.5 – ns tCLZ Clock to low Z [23, 24, 25] 1.0– 1.5– ns tCHZ Clock to high Z [23, 24, 25] – 2.6 – 3.4 ns tOEV OE LOW to output valid – 2.6 – 3.4 ns tOELZ OE LOW to output low Z [23, 24, 25] 0 –0– ns tOEHZ OE HIGH to output high Z [23, 24, 25] – 2.6 – 3.4 ns Set-up Times tAS Address set-up before CLK rise 1.2 – 1.5 – ns tADS ADSC, ADSP set-up before CLK rise 1.2 – 1.5 – ns tADVS ADV set-up before CLK rise 1.2 – 1.5 – ns tWES GW, BWE, BWX set-up before CLK rise 1.2 – 1.5 – ns tDS Data input set-up before CLK rise 1.2 – 1.5 – ns tCES Chip enable set-up before CLK rise 1.2 – 1.5 – ns Hold Times tAH Address hold after CLK rise 0.3 – 0.5 – ns tADH ADSP, ADSC hold after CLK rise 0.3 – 0.5 – ns tADVH ADV hold after CLK rise 0.3 – 0.5 – ns tWEH GW, BWE, BWX hold after CLK rise 0.3 – 0.5 – ns tDH Data input hold after CLK rise 0.3 – 0.5 – ns tCEH Chip enable hold after CLK rise 0.3 – 0.5 – ns Notes 20. Timing reference level is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V. 21. Test conditions shown in (a) of Figure 3 on page 20 unless otherwise noted. 22. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 23. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in (b) of Figure 3 on page 20. Transition is measured ± 200 mV from steady-state voltage. 24. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve high Z prior to low Z under the same system conditions. 25. This parameter is sampled and not 100% tested. |
Similar Part No. - CY7C1440AV33_12 |
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Similar Description - CY7C1440AV33_12 |
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