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CY7C1347G Datasheet(PDF) 1 Page - Cypress Semiconductor |
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CY7C1347G Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 25 page  CY7C1347G 4-Mbit (128 K × 36) Pipelined Sync SRAM Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 38-05516 Rev. *L Revised July 24, 2012 4-Mbit (128 K × 36) Pipelined Sync SRAM Features ■ Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD) ■ 2.5- / 3.3-V I/O power supply (VDDQ) ■ Fast clock to output times: 2.6 ns (for 250 MHz device) ■ User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences ■ Separate processor and controller address strobes ■ Synchronous self timed writes ■ Asynchronous output enable ■ Offered in Pb-free 100-pin TQFP, Pb-free 119-ball BGA package ■ “ZZ” sleep mode option and stop clock option ■ Available in commercial temperature range Functional Description The CY7C1347G is a 3.3 V, 128 K × 36 synchronous pipelined SRAM designed to support zero-wait-state secondary cache with minimal glue logic. CY7C1347G I/O pins can operate at either the 2.5 V or the 3.3 V level. The I/O pins are 3.3 V tolerant when VDDQ = 2.5 V. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise is 2.6 ns (250 MHz device). CY7C1347G supports either the interleaved burst sequence used by the Intel Pentium processor or a linear burst sequence used by processors such as the PowerPC. The burst sequence is selected through the MODE pin. Accesses can be initiated by asserting either the address strobe from processor (ADSP) or the address strobe from controller (ADSC) at clock rise. Address advancement through the burst sequence is controlled by the ADV input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the four Byte Write Select (BW[A:D]) inputs. A global write enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are conducted with on-chip synchronous self timed write circuitry. Three synchronous chip Selects (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank selection and output tristate control. To provide proper data during depth expansion, OE is masked during the first clock of a read cycle when emerging from a deselected state. Selection Guide Description 250 MHz 200 MHz 166 MHz 133 MHz Unit Maximum access time 2.6 2.8 3.5 4.0 ns Maximum operating current 325 265 240 225 mA Maximum CMOS standby current 40 40 40 40 mA |
Similar Part No. - CY7C1347G_12 |
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Similar Description - CY7C1347G_12 |
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