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CY7C1347G Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY7C1347G
Description  4-Mbit (128 K 횞 36) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1347G Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY7C1347G
Document Number: 38-05516 Rev. *L
Page 9 of 25
Truth Table
The truth table for part number CY7C1347G follow.
Next Cycle [1, 2, 3, 4, 5]
Add. Used CE1 CE2 CE3
ZZ
ADSP ADSC ADV WRITE
OE
CLK
DQ
Deselect cycle, power-down
None
H
X
X
L
X
L
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
L
X
L
L
X
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
X
H
L
L
X
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
L
X
L
H
L
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
X
H
L
H
L
X
X
X
L–H Tristate
Snooze mode, power-down
None
X
X
X
H
X
X
X
X
X
X
Tristate
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L–H Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L–H Tristate
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L–H D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L–H Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L–H Tristate
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L–H Tristate
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L–H Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L–H Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L–H Tristate
Write cycle, continue burst
Next
X
X
X
L
H
H
L
L
X
L–H D
Write cycle, continue burst
Next
H
X
X
L
X
H
L
L
X
L–H D
Read cycle, suspend burst
Current
X
X
X
L
H
H
H
H
L
L–H Q
Read cycle, suspend burst
Current
X
X
X
L
H
H
H
H
H
L–H Tristate
Read cycle, suspend burst
Current
H
X
X
L
X
H
H
H
L
L–H Q
Read cycle, suspend burst
Current
H
X
X
L
X
H
H
H
H
L–H Tristate
Write cycle, suspend burst
Current
X
X
X
L
H
H
H
L
X
L–H D
Write cycle, suspend burst
Current
H
X
X
L
X
H
H
L
X
L–H D
Notes
1. X = “Do not Care.” H = Logic HIGH, L = Logic LOW.
2. WRITE = L when any one or more Byte Write Enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals (BWA,
BWB, BWC, BWD), BWE, GW = H.
3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
4. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A:D]. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to allow the outputs to tristate. OE is a do not care
for the remainder of the write cycle.
5. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tristate when OE is inactive
or when the device is deselected, and all data bits behave as output when OE is active (LOW).


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