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LD274 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # LD274
Description  GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

LD274 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
1997-11-01
LD 274
Gruppierung der Strahlstärke I
e in Achsrichtung
gemessen bei einem Raumwinkel
Ω = 0.001 sr
Grouping of radiant intensity I
e
in axial direction
at a solid angle of
Ω = 0.001 sr
1) Nur auf Anfrage lieferbar.
1) Available only on request.
Kapazität
Capacitance
V
R = 0 V, f = 1 MHz
C
o
25
pF
Durchlaßspannung
Forward voltage
I
F = 100 mA, tp = 20 ms
I
F = 1 A, tp = 100 µs
V
F
V
F
1.30
(≤ 1.5)
1.90
(≤ 2.5)
V
V
Sperrstrom,
V
R = 5 V
Reverse current
I
R
0.01
(≤ 1)µA
Gesamtstrahlungsfluß
Total radiant flux
I
F = 100 mA, tp = 20 ms
Φ
e
15
mW
Temperaturkoeffizient von I
e bzw. Φe,
I
F = 100 mA
Temperature coefficient of I
e or Φe,
I
F = 100 mA
TC
I
– 0.55
%/K
Temperaturkoeffizient von
V
F, IF = 100 mA
Temperature coefficient of
V
F, IF = 100 mA
TC
V
– 1.5
mV/K
Temperaturkoeffizient von
λ, I
F = 100 mA
Temperature coefficient of
λ, I
F = 100 mA
TCλ
+ 0.3
nm/K
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
LD 274
LD 274-21)
LD 274-3
Strahlstärke
Radiant intensity
I
F = 100 mA, tp = 20 ms
Ie min
Ie max
50
–
50
100
80
–
mW/sr
mW/sr
Strahlstärke
Radiant intensity
I
F = 1 A, tp = 100 µs
Ie typ.
350
600
800
mW/sr
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit


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