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LD274 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # LD274
Description  GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

LD274 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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LD 274
Semiconductor Group
2
1997-11-01
Grenzwerte (
T
A = 25 °C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 55 ... + 100
°C
Sperrschichttemperatur
Junction temperature
T
j
100
°C
Sperrspannung
Reverse voltage
V
R
5V
Durchlaßstrom
Forward current
I
F
100
mA
Stoßstrom,
t
p = 10 µs, D = 0
Surge current
I
FSM
3A
Verlustleistung
Power dissipation
P
tot
165
mW
Wärmewiderstand
Thermal resistance
R
thJA
450
K/W
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
I
F = 100 mA, tp = 20 ms
λ
peak
950
nm
Spektrale Bandbreite bei 50 % von
I
max
Spectral bandwidth at 50 % of
I
max
I
F = 100 m A, tp = 20 ms
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ± 10
Grad
Aktive Chipfläche
Active chip area
A
0.09
mm2
Abmessungen der aktive Chipfläche
Dimension of the active chip area
L
× B
L
× W
0.3
× 0.3
mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
H
4.9 ... 5.5
mm
Schaltzeiten, I
e von 10 % auf 90 % und von
90 % auf 10 %, bei
I
F = 100 mA, RL = 50 Ω
Switching times, I
e from 10 % to 90 % and
from 90 % to 10 %,
I
F = 100 mA, RL = 50 Ω
t
r, tf
1
µs


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