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6N50_1106 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 6N50_1106
Description  6A, 500V N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N50_1106 Datasheet(HTML) 2 Page - Unisonic Technologies

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6N50
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-526.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
6 (Note 2)
A
Drain Current
Pulsed (Note 3)
IDM
24 (Note 2)
A
Avalanche Current (Note 3)
IAR
6
A
Single Pulsed (Note 4)
EAS
270
mJ
Avalanche Energy
Repetitive (Note 5)
EAR
20
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
89
Power Dissipation (TC=25°C)
TO-220F
31
W
TO-220
0.71
Derate above 25°C
TO-220F
PD
0.24
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =13mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220
62.5
Junction to Ambient
TO-220F
θJA
62.5
°C/W
TO-220
1.4
Junction to Case
TO-220F
θJC
4.0
°C/W


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