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2N3906 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N3906 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page ![]() 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-028, C ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector dissipation PC 625 mW Junction Temperature TJ 125 °С Operating Temperature TOPR -20 ~ +85 °С Storage Temperature TSTG -40 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICEX VCE=-30V, VEB=-3V -50 nA Base Cut-Off Current IBL VCE=-30V, VEB=-3V -50 nA Collector-Base Breakdown Voltage VCBO IC=-10μA, IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0 (Note) -40 V Emitter-Base Breakdown Voltage VEBO IE=-10μA, IC=0 -6 V DC Current Gain (Note) hFE1 VCE=-1V, IC=-0.1mA 60 hFE2 VCE=-1V, IC=-1mA 80 hFE3 VCE=-1V, IC=-10mA 100 300 hFE4 VCE=-1V, IC=-50mA 60 hFE5 VCE=-1V, IC=-100mA 30 Collector-Emitter Saturation Voltage (Note) VCE(SAT)1 IC=-10mA, IB=-1mA -0.25 V VCE(SAT)2 IC=-50mA, IB=-5mA -0.4 Base-Emitter Saturation Voltage VBE(SAT)1 IC=-10mA, IB=-1mA -0.65 -0.85 V VBE(SAT)2 IC=-50mA, IB=-5mA -0.95 Transition Voltage fT VCE=-20V, IC=-10mA, f=100MHz 250 MHz Output Capacitance COB VCB=-5V, IE=0, f=1MHz 4.5 pF Turn On Time tON VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA 70 ns Turn Off Time tOFF IB1=1B2=-1mA 300 ns Note: Pulse test: PW<=300μs, Duty Cycle<=2% |
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