GaAs FET

CLY 5

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Siemens Aktiengesellschaft

pg. 7/8

17.12.96

HL EH PD21

CLY5 Power GaAs-FET Matching Conditions

Definition:

ΓΓ

Measured Data:

Typ

f

[GHz]

VDS

[V]

ID

[mA]

P-1dB

[dBm]

Gain

[dB]

Γms

MAG

Γms

ANG

Γml

MAG

Γml

ANG

CLY5

0.9

3

350

25.8

15.6

0.50

133

0.70

-154

5

350

29.2

16.3

0.52

144

0.61

-156

6

350

29.8

17.2

0.58

143

0.54

-168

1.5

3

350

26.5

11.0

0.63

-167

0.74

-126

5

350

30.0

11.5

0.59

-164

0.69

-126

6

350

30.6

12.6

0.64

-165

0.55

-132

1.8

3

350

26.5

9.5

0.58

-143

0.76

-116

5

350

30.0

10.0

0.56

-140

0.71

-118

6

350

30.5

10.0

0.58

-133

0.69

-119

2.4

3

350

25.0

8.4

0.62

-108

0.68

-105

5

350

29.1

8.7

0.60

-109

0.66

-105

6

350

30.5

8.9

0.65

-112

0.68

-106

Note: Gain is small signal gain @

Γms and Γml