GaAs FET

CLY 2

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Siemens Aktiengesellschaft

pg. 3/77

17.12.96

HL EH PD 21

Output Characteristics

Drain-Source Voltage [V]

0

0,05

0,1

0,15

0,2

0,25

0,3

0,35

0,4

0,45

0,5

01

23

45

67

VGS=0V

VGS=-0.5V

VGS=-1V

VGS=-1.5V

VGS=-2V

VGS=-2.5V

PtotDC

Compression Power vs. Drain-Source Voltage

f = 1.8GHz; ID = 0.5IDSS

P1dB

0

5

10

15

20

25

30

35

40

[dBm]

012

3456

[V]

Dra in-Source Voltage

η

η

D

0

10

20

30

40

50

60

70

80

[%]