GaAs FET

CLY 2

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Siemens Aktiengesellschaft

pg. 7/77

17.12.96

HL EH PD 21

CLY2 Power GaAs-FET Matching Conditions

Definition:

ΓΓ

Measured Data:

Typ

f

[GHz]

VDS

[V]

ID

[mA]

P-1dB

[dBm]

Gain

[dB]

Γms

MAG

Γms

ANG

Γml

MAG

Γml

ANG

CLY2

0.9

3

175

22.8

15.7

0.49

75

0.42

-165

5

175

25.8

16.5

0.52

75

0.22

-172

6

175

26.9

16.9

0.50

76

0.21

-156

1.5

5

175

25.8

16.1

0.68

106

0.42

143

6

175

26.9

16.9

0.76

113

0.34

139

1.8

2

175

19.0

15.0

0.75

130

0.52

-171

3

175

22.8

15.4

0.70

125

0.45

-172

4

175

24.5

15.6

0.75

131

0.41

166

5

175

25.8

15.7

0.72

131

0.38

163

6

175

26.8

16.0

0.72

135

0.35

155

2.4

3

175

21.5

13.0

0.70

158

0.46

-179

5

175

26.1

13.0

0.67

152

0.36

-178

Note: Gain is small signal gain @

Γms and Γml