GaAs FET

CLY 15

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Siemens Aktiengesellschaft

pg. 2/7

09/96

HL EH PD 21

Electrical characteristics (TA = 25°C , unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current *)

VDS = 3V

VGS = 0V

IDSS

2.4

3.2

4.8

A

Cut-off current

VDS = 3V

VGS = -3.8V

ID

-

-

400

µA

Gate cut-off current

VDS = 3V

VGS = -3.8V

IG

-20

70

µA

Pinch-off Voltage

VDS=3V ID=400µA

VGS(p)

-3.8

-2.8

-1.8

V

Small Signal Gain *)

VDS = 3V

ID = 1.4A

f = 1.8GHz

Pin = 5dBm

G

-6

-

dB

Output Power *)

VDS = 3V

ID = 1.4A

f = 1.8GHz

Pin = 29dBm

Po

32

32.5

-

dBm

Output Power *)

VDS = 5V

ID = 1.4A

f = 1.8GHz

Pin = 30 dBm

Po

34.5

35

-

dBm

1dB-Compression Point *)

VDS = 3V

ID = 1.4A

f = 1.8GHz

P1dB

-

31.5

-

dBm

1dB-Compression Point *)

VDS = 5V

ID = 1.4A

f = 1.8GHz

P1dB

-

34.5

-

dBm

Power Added Efficiency *)

VDS = 3V

ID = 1.4A

f = 1.8GHz

Pin = 29dBm

45

50

-

%

*) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.