GaAs FET

CLY 10

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Siemens Aktiengesellschaft

pg. 7/7

17.12.96

HL EH PD 21

CLY10 Power GaAs-FET Matching Conditions

Definition:

ΓΓ

Measured Data:

Typ

f

[GHz]

VDS

[V]

ID

[mA]

P-1dB

[dBm]

Gain

[dB]

Γms

MAG

Γms

ANG

Γml

MAG

Γml

ANG

CLY10

0.9

3

700

26.7

15.3

0.58

169

0.68

-156

5

700

32.0

15.4

0.57

173

0.69

-157

6

700

33.8

14.9

0.56

174

0.68

-155

1.5

3

700

28.5

10.0

0.70

-135

0.79

-132

5

700

32.5

10.1

0.67

-127

0.76

-133

6

700

33.3

10.2

0.67

-134

0.72

-132

1.8

3

700

28.5

9.0

0.70

-120

0.78

-123

5

700

32.5

9.5

0.70

-120

0.78

-125

6

700

33.3

9.7

0.73

-125

0.77

-126

2.4

3

700

27.9

7.2

0.77

-86

0.73

-107

5

700

31.3

7.4

0.74

-92

0.65

-110

6

700

33.3

7.5

0.73

-87

0.70

-110

Note: Gain is small signal gain @

Γms and Γml