GaAs FET

CLY 10

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Siemens Aktiengesellschaft

pg. 3/7

17.12.96

HL EH PD 21

Compression Power vs. Drain-Source Voltage

f = 1.8GHz; IDS = 0.5 IDSS

P1dB

η

η

D

0

5

10

15

20

25

30

35

40

[dBm]

01

23

45

6

7

8

0

10

20

30

40

50

60

70

80

[%]

[V]

Drain-Source Voltage

Small Signal Gain

P1dB

0

2

4

6

8

10

12

16

[dB]

01

23

45

6

7

8

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

[W]

[V]

Drain-Source Voltage

14

Output Characteristics

Drain-Source Voltage [V]

0

0,2

0,4

0,6

0,8

1

1,2

1,4

1,6

1,8

01

23

456

VGS=0V

VGS=-0.5V

VGS=-1V

VGS=-1.5V

VGS=-2V

VGS=-2.5V

PtotDC