GaAs FET

CLY 10

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Siemens Aktiengesellschaft

pg. 2/7

17.12.96

HL EH PD 21

Electrical characteristics (TA = 25°C , unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

VDS = 3 V

VGS = 0 V

IDSS

1.2

1.6

2.4

A

Drain-source pinch-off current

VDS = 3 V

VGS = -3.8 V

ID

-

-

200

µA

Gate pinch-off current

VDS = 3 V

VGS = -3.8 V

IG

-10

35

µA

Pinch-off Voltage

VDS= 3 V

ID=200µA

VGS(p)

-3.8

-2.8

-1.8

V

Small Signal Gain

VDS = 3 V

ID = 700 mA

f = 1.8 GHz

Pin = 0 dBm

G

-9

-

dB

Small Signal Gain

VDS = 3 V

ID = 700 mA

f = 1.8 GHz

Pin = 0 dBm

G

-8

-

dB

Output Power

VDS = 3 V

ID = 700 mA

f = 1.8 GHz

Pin = 20.5 dBm

Po

28

28.5

-

dBm

Output Power

VDS = 5 V

ID = 700 mA

f = 0.9 GHz

Pin = 20 dBm

Po

32.0

32.5

-

dBm

1dB-Compression Point

VDS = 3 V

ID = 700 mA

f = 1.8 GHz

P1dB

-

28.5

-

dBm

1dB-Compression Point

VDS = 5 V

ID = 700 mA

f = 1.8GHz

P1dB

-

32.5

-

dBm

Power Added Efficiency

VDS = 5 V

ID = 700 mA

f = 1.8 GHz

Pin = 20 dBm

PAE

40

55

-

%

Source Match:

Γ

Γ

Source Match:

Γ

Γ