GaAs FET

CLY 10

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Siemens Aktiengesellschaft

pg. 1/7

17.12.96

HL EH PD 21

D a t a s h e e t

* Power amplifier for mobile phones

* For frequencies from 400 MHz to 2.5 GHz

* Wide operating voltage range: 2.7 to 6 V

* P

28.5 dBm typ.

* High efficiency better 55 %

ESD:

Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking

Ordering code

(taped)

Pin Configuration

1

2

3

4

Package 1)

CLY 10

CLY 10

Q62702-L94

G

S

D

S

SOT 223

Maximum ratings

Symbol

Values

Unit

Drain-source voltage

VDS

9V

Drain-gate voltage

VDG

12

V

Gate-source voltage

VGS

-6

V

Drain current

ID

2.1

A

Channel temperature

TCh

150

°C

Storage temperature

Tstg

-55...+150

°C

PtotDC

3.5

2.0

W

Thermal resistance

RthChS

≤20

K/W

2) Ts is measured on the source lead to the PCB under load.