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CGY40 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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CGY40 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 5 page ![]() GaAs MMIC CGY 40 ________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21 D a t a s h e e t * Single-stage monolithic microwave IC ( MMIC- amplifier ) * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V * Individual current control with neg. gate bias * Hermetically sealed ceramic stripline package Cerec-X ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Circuit Diagram (Pin Configuration) Package 1) CGY 40 40 Q68000-A4444 Cerec-X Maximum ratings Symbol Value Unit Drain-voltage VD 5.5 V Current control gate voltage VG -3 ... 0 V Drain-gate voltage VDG 8.5 V Input power PIN 16 dBm Channel temperature TCh 150 °C Storage temperature range Tstg -55...+150 °C Total power dissipation (TS < 82°C) 2) Ptot 440 mW Thermal resistance Channel-soldering point 2) RthChS 155 K/W Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) Dimensions see chapter Package Outlines 2) Ts is measured on the source lead at the soldering point to the PCB. |
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