CGY 196

Siemens Aktiengesellschaft

6

16.6.1998

HL HF PE GaAs

Electrical characteristics [ 3.0V DECT-Application: PCB-Layout see page 9]

(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Supply current

VD=3.0V; Pin = +0 dBm

IDD

-

300

-

mA

Supply current

VD=3.0V; Pin = -10 dBm

IDD

-

450

-

mA

Gain

VD=3.0V; Pin = -10 dBm

G

32

dB

Output Power

VD=3.0V; Pin = 0 dBm

Po

26.0

dBm

Overall Power added Efficiency

VD=3.0V; Pin = +0 dBm

PAE

45

-

%

Overall Power added Efficiency

VD=3.0V; Pin = 3 dBm

PAE

50

-

%

Supply current

VD=4.8V; Pin = -10 dBm

IDD

-

450

-

mA

Supply current

VD=4.8V; Pin = 0 dBm

IDD

-

370

-

mA

Gain

VD=4.8V; Pin = -10 dBm

G

-

32

-

dB

Output Power

VD=4.8V; Pin = 0 dBm

Po

29

dBm

Overall Power added Efficiency

VD=4.8V; Pin = 0 dBm

PAE

45

-

%

Overall Power added Efficiency

VD=4.8V; Pin = 5 dBm

PAE

50

-

%

Off Isolation

VD=0V; Pin = 0 dBm

-S21

40

dB

Load mismatch

Pin=0dBm , VD

≤3.6V , Z

Load VSWR = 20:1 for all phase,

-

No module damage

for 10 sec.

-

Load mismatch

Pin=3dBm , VD

≤5.0V , Z

Load VSWR = 20:1 for all phase,

-

No module damage

for 10 sec.

-

Stability

Load VSWR = 3:1 for all phase

-

All spurious output

more than 70 dB below

desired signal level

-

Stability

Load VSWR = 3:1 for all phase,

-

All spurious output

more than 70 dB below

desired signal level

-

Semiconductor Group

6

1998-11-01