WFY3P02 datasheet(2/5 Pages) WINSEMI

Part #	WFY3P02

Description	TrenchPowerMOSFET ??0 V,Single P?묬hannel, SOT??3

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Direct Link	http://www.winsemi.com

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2 / 5 page

WFY3P02

2 /5

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Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

IDR

-

-2.4

A

Pulse drain reverse current

IDRP

-

-7.5

A

Forward voltage (diode)

VDSF

IDR = -2.4A, VGS = 0 V

-

-0.82

-1.2

V

Reverse recovery time

trr

IDR = -2.4A,

VGS = 0 V,

dIDR / dt = 100 A / μs

-

12.8

15

ns

Charge Time

ta

9.9

ns

Discharge Time

tb

3.0

ns

Reverse recovery charge

Qrr

-

1008

-

μC

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current(Note 4)

IGSS

VGS = ±8 V, VDS = 0 V

-

±100

nA

Drain cut−off current(Note 4)

IDSS

VDS = -16 V, VGS = 0 V

-

-1

μA

Drain−source breakdown voltage

V(BR)DSS

ID = -250 μA, VGS = 0 V

-20

-

V

Gate threshold voltage

VGS(th)

VDS = VDS ID =-250 μA

-0.40

-0.72

-1.5

V

Drain−source ON resistance

RDS(ON)

VGS = −4.5 V, ID = −1.6 A

-

70

85

mΩ

VGS = −2.5 V, ID = −1.3 A

90

120

VGS = −1.8 V, ID = −0.9 A

112

200

Forward Transconductance

gfs

VDS = −5.0 V, ID = −2.3 A

-

75

-

S

Input capacitance

Ciss

VDS = -10 V,

VGS = 0 V,

f = 1 MHz

-

675

-

pF

Reverse transfer capacitance

Crss

-

75

-

Output capacitance

Coss

-

100

-

Switching time

(Note 5)

Rise time

tr

V

GS = −4.5 V,

V

DS = −10 V,

ID = −1.6 A,

R

G = 6.0 Ω

-

12.6

-

ns

Turn−on time

ton

-

7.5

-

Fall time

tf

-

21.0

-

Turn−off time

toff

-

30.2

-

Total gate charge (gate−source plus

gate−drain)

Qg

V

GS = −4.5 V,

V

DS = −10 V,

I

D = −1.6 A

-

7.5

8.5

nC

Gate−source charge

Qgs

-

1.2

-

Gate−drain (“miller”) Charge

Qgd

-

2.2

-

Reverse Recovery Charge

RG

-

6.5

-

Ω

Source−Drain Ratings and Characteristics (Ta = 25°C)

Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.

Note 5: Switching characteristics are independent of operating junction temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

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WFY3P02 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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