WFY3P02

WFY3P02

WFY3P02

WFY3P02

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

T

T

T

Trench

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rench Power

Power

Power

Power MOSFET

MOSFET

MOSFET

MOSFET

−

−

−

−20

20

20

20 V

V

V

V,,,, Si

Si

Si

Sin

n

n

ngle

gle

gle

gle P

P

P

P−

−

−

−Channel,

Channel,

Channel,

Channel, SO

SO

SO

SOT

T

T

T−

−

−

−23

23

23

23

Features

■ −1.5 V Rated for Low Voltage Gate Drive

■ SOT-23 Surface Mount for Small Footprint

■ Single Pulse Avalanche Energy Rated

■ Halogen-free

General Description

This Power MOSFET is produced using Winsemi’s advanced

MOS technology. This latest technology has been especially

designed to minimize on-state resistance, have a high rugged

avalanche characteristics. This devices is specially well suited for

Load/Power

Management

for

Portables

and

Computing,

Charging Circuits and Battery Protection

Absolute Maximum Ratings

D

D

D

D

G

G

G

G

S

S

S

S

SO

SO

SO

SOT

T

T

T----23

23

23

23

Marking : P02YM

Y :year ,M :months

Symbol

Parameter

Value

Units

Drain Source Voltage

-20

V

Continuous Drain Current(Note 1)

Steady State

Tc=25

℃

−2.4

A

Tc=85℃

-1.7

t≤10s

Tc=25

℃

-3.2

Total Power Dissipation(Note 1)

Steady State

Tc=25

℃

0.73

W

t≤10s

1.25

Continuous Drain Current(Note 2)

Steady State

Tc=25℃

-1.8

A

Tc=85

℃

-1.3

Total Power Dissipation(Note 2)

Tc=25℃

0.42

W

Drain Current Pulsed

t=10s

-7.5

A

Gate to Source Voltage

±8

V

ESD

ESD Capability (Note 3)

225

V

Junction and Storage Temperature

-55~150

℃

Maximum lead Temperature for soldering purposes

260

℃

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

Thermal Characteristics

Symbol

Parameter

Value

Units

Min

Typ

Max

Thermal Resistance, Junction-to-Ambient(Note 1)

-

-

170

℃/W

Thermal Resistance, Junction-to-Ambient(Note 1)

110

℃/W

Thermal Resistance, Junction-to-Ambient(Note 2)

300

℃/W

Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.

Note 3: ESD Rating Information: HBM Class 0

Re v. A Ma r .20 10

P02-1