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WFW24N50N Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFW24N50N Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  WFW WFW WFW WFW24N50 24N50 24N50 24N50N N N N 2/7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±25V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=500V,VGS=0V - - 1 µA VDS=400V,Tc=125℃ 10 Drain -source breakdown voltage V(BR)DSS ID=10 mA,VGS=0V 500 - - V Breakdown voltage Temperature coefficient △BV DSS/ △TJ ID=250µA,Referenced to 25℃ - 0.53 - V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=1mA 3.0 - 5.0 V Drain -source ON resistance RDS(ON) VGS=10V,ID=9A - 0.16 0.19 Ω Forward Transconductance gfs VDS=40V,ID=9A - 22 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 3500 4500 pF Reverse transfer capacitance Crss - 55 70 Output capacitance Coss - 520 670 Switching time Rise time tr VDD=250V, ID=18A RG=25Ω (Note4,5) - 250 500 ns Turn-on time ton - 80 170 Fall time tf - 155 320 Turn-off time toff - 200 400 Total gate charge(gate-source plus gate-drain) Qg VDD=400V, VGS=10V, ID=18A (Note4,5) - 90 120 nC Gate-source charge Qgs - 23 - Gate-drain("miller") Charge Qgd - 44 - Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 24 A Pulse drain reverse current IDRP - - - 96 A Forward voltage(diode) VDSF IDR=24A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=24A,VGS=0V, dIDR / dt =100 A / µs - 400 - ns Reverse recovery charge Qrr - 4.3 - µC Electrical Characteristics(Tc=25℃) Source-Drain Ratings and Characteristics(Ta=25℃) Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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