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WFW24N50N Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFW24N50N Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  WFW WFW WFW WFW24N50 24N50 24N50 24N50N N N N Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. S S S Sil il il iliiiic c c co o o on n n n N N N N----Ch Ch Ch Cha a a an n n nn n n nel el el el M M M MOS OS OS OSF F F FET ET ET ET Features ■ 24A,500V,R DS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25 ℃) 24 A Continuous Drain Current(@Tc=100 ℃) 15.2 A IDM Drain Current Pulsed (Note1) 96 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 1100 mJ EAR Repetitive Avalanche Energy (Note1) 29 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25 ℃) 290 W Derating Factor above 25 ℃ 2.33 W/ ℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 0.43 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.24 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W Rev.A Aug.2010 |
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