Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

WFF634 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFF634
Description  Silicon N-Channel MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFF634 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WFF634 Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 6Page - Shenzhen Winsemi Microelectronics Co., Ltd WFF634 Datasheet HTML 7Page - Shenzhen Winsemi Microelectronics Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
WF
WF
WF
WFF
F
F
F63
63
63
634
4
4
4
2/7
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
E
E
E
Ellllec
ec
ec
ecttttrrrriiiical
cal
cal
cal C
C
C
Ch
h
h
ha
a
a
arrrrac
ac
ac
actttte
e
e
errrriiiis
s
s
sttttiiiics
cs
cs
cs ((((T
T
T
Tc
c
c
c =
=
=
= 2
2
2
25
5
5
5°C
C
C
C))))
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
-
-
±100
nA
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±20
-
-
V
Drain cut−off current
IDSS
VDS = 200 V, VGS = 0 V
-
-
1
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
250
-
-
V
Break Voltage Temperature
Coefficient
ΔBVDSS/
ΔTJ
ID=250μA, Referenced to 25℃
-
0.37
-
V/℃
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 5.1A
-
-
0.45
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 5.1A
1.6
-
-
S
Input capacitance
Ciss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
-
1220
-
pF
Reverse transfer capacitance
Crss
-
32
-
Output capacitance
Coss
-
130
-
Switching time
Rise time
tr
VDD =125 V,
ID =5.6A
RG=12Ω
(Note4,5)
-
9.6
-
ns
Turn−on time
ton
-
21
-
Fall time
tf
-
42
-
Turn−off time
toff
-
19
-
Total gate charge (gate−source
plus gate−drain)
Qg
VDD = 200 V,
VGS = 10 V,
ID = 5.6A
(Note4,5)
-
41
51.8
nC
Gate−source charge
Qgs
-
6.5
-
Gate−drain (“miller”) Charge
Qgd
-
22
-
So
So
So
Sou
u
u
urrrrc
c
c
ce
e
e
e−
−D
D
D
Drrrra
a
a
aiiiin
n
n
n R
R
R
Ra
a
a
attttin
in
in
ing
g
g
gs
s
s
s a
a
a
an
n
n
nd
d
d
d Ch
Ch
Ch
Cha
a
a
arrrrac
ac
ac
actttte
e
e
errrriiiis
s
s
sttttiiiics
cs
cs
cs ((((T
T
T
Ta
a
a
a =
=
=
= 2
2
2
25
5
5
5°C
C
C
C))))
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
8.1
A
Pulse drain reverse current
IDRP
-
-
-
32
A
Forward voltage (diode)
VDSF
IDR = 8.1 A, VGS = 0 V
-
1.4
2
V
Reverse recovery time
trr
IDR = 5.6 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
198
-
ns
Reverse recovery charge
Qrr
-
1.2
2.4
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution


Similar Part No. - WFF634

ManufacturerPart #DatasheetDescription
logo
Wisdom technologies Int...
WFF634 WISDOM-WFF634 Datasheet
799Kb / 7P
   N-Channel MOSFET
More results

Similar Description - WFF634

ManufacturerPart #DatasheetDescription
logo
Leshan Radio Company
L2SK3019LT1G LRC-L2SK3019LT1G_15 Datasheet
671Kb / 4P
   Silicon N-Channel MOSFET
logo
Shenzhen Winsemi Microe...
WGP15G65 WINSEMI-WGP15G65 Datasheet
529Kb / 6P
   Silicon N-Channel MOSFET
WFU5N60B WINSEMI-WFU5N60B_14 Datasheet
201Kb / 8P
   Silicon N-Channel MOSFET
WFF8N65L WINSEMI-WFF8N65L Datasheet
244Kb / 8P
   Silicon N-Channel MOSFET
WFD20N06 WINSEMI-WFD20N06 Datasheet
615Kb / 6P
   Silicon N-Channel MOSFET
WFP8N60B WINSEMI-WFP8N60B Datasheet
271Kb / 8P
   Silicon N-Channel MOSFET
WFU2N60B WINSEMI-WFU2N60B_13 Datasheet
252Kb / 8P
   Silicon N-Channel MOSFET
K2611B WINSEMI-K2611B_14 Datasheet
288Kb / 8P
   Silicon N-Channel MOSFET
WFP12N65 WINSEMI-WFP12N65 Datasheet
389Kb / 7P
   Silicon N-Channel MOSFET
WFP540 WINSEMI-WFP540 Datasheet
348Kb / 5P
   Silicon N-Channel MOSFET
WFW24N50N WINSEMI-WFW24N50N Datasheet
437Kb / 7P
   Silicon N-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com