![]() |
Electronic Components Datasheet Search |
|
WFF634 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
|
|
WFF634 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 7 page ![]() WF WF WF WFF F F F63 63 63 634 4 4 4 2/7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance E E E Ellllec ec ec ecttttrrrriiiical cal cal cal C C C Ch h h ha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Tc c c c = = = = 2 2 2 25 5 5 5°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±20 - - V Drain cut−off current IDSS VDS = 200 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 250 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ΔTJ ID=250μA, Referenced to 25℃ - 0.37 - V/℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 5.1A - - 0.45 Ω Forward Transconductance gfs VDS = 50 V, ID = 5.1A 1.6 - - S Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz - 1220 - pF Reverse transfer capacitance Crss - 32 - Output capacitance Coss - 130 - Switching time Rise time tr VDD =125 V, ID =5.6A RG=12Ω (Note4,5) - 9.6 - ns Turn−on time ton - 21 - Fall time tf - 42 - Turn−off time toff - 19 - Total gate charge (gate−source plus gate−drain) Qg VDD = 200 V, VGS = 10 V, ID = 5.6A (Note4,5) - 41 51.8 nC Gate−source charge Qgs - 6.5 - Gate−drain (“miller”) Charge Qgd - 22 - So So So Sou u u urrrrc c c ce e e e− − − −D D D Drrrra a a aiiiin n n n R R R Ra a a attttin in in ing g g gs s s s a a a an n n nd d d d Ch Ch Ch Cha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Ta a a a = = = = 2 2 2 25 5 5 5°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 8.1 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8.1 A, VGS = 0 V - 1.4 2 V Reverse recovery time trr IDR = 5.6 A, VGS = 0 V, dIDR / dt = 100 A / μs - 198 - ns Reverse recovery charge Qrr - 1.2 2.4 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
Similar Part No. - WFF634 |
|
Similar Description - WFF634 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |