WF

WF

WF

WFF

F

F

F63

63

63

634

4

4

4

Rev.A Jun.2010

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

S

S

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c

c

co

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N

N

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C

C

Ch

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a

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n

n

nn

n

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nel

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M

M

MOS

OS

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FET

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F

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■ Ultra-low Gate Charge(Typical 41nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

G

G

G

Ge

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T h i s P o w e r M O S F E T i s p r o d u c e d u s i n g W i n s e m i ’ s a d v a n c e d

pl a n a r str i p e , DM O S te c h n ol o g y . Th is la t es t te c h n o l o g y ha s bee n

es p e c i a l l y de s i g n e d to mi n i m i z e on - s t a t e r e s i s t a n c e , ha v e a hi g h

r u g g e d av a l a n c h e ch a r a c t e r i s t i c s . T h i s d e v i c e s is sp e c i a l l y we l l

s u i t e d f o r l o w v o l t a g e a p p l i c a t i o n s s u c h a s a u t o m o t i v e , h i g h

effici ency switchi ng for DC/DC conv er ter s , and DC motor control.

A

A

A

Ab

b

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s

s

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M

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Max

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m

m

m R

R

R

Ra

a

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ng

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s

s

S

S

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m

m

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bol

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ol

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P

P

P

Pa

a

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m

m

me

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V

V

V

Va

a

a

alue

lue

lue

lue

Uni

Uni

Uni

Unitttts

s

s

s

Drain Source Voltage

250

V

Continuous Drain Current(@Tc=25℃)

9

A

Continuous Drain Current(@Tc=100℃)

5

A

Drain Current Pulsed

(Note1)

72

A

Gate to Source Voltage

±20

V

Single Pulsed Avalanche Energy

(Note 2)

300

mJ

Repetitive Avalanche Energy

(Note 1)

7.4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.8

V/ns

Total Power Dissipation(@Tc=25℃)

48

W

Derating Factor above 25℃

0.42

W/℃

Junction and Storage Temperature

-55~150

℃

300

℃

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D

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T

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rm

rm

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C

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cs

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S

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M

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Min

in

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p

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M

M

M

Ma

a

a

ax

x

x

x

Thermal Resistance, Junction-to-Case

-

-

2.60

℃/W

Thermal Resistance, Case-to-Sink

-

0.5

-

℃/W

Thermal Resistance, Junction-to-Ambient

-

-

62.5

℃/W