BUZ104 datasheet(4/9 Pages) SIEMENS

Part #	BUZ104

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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4 / 9 page

Semiconductor Group

4

07/96

BUZ 104

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

IS

-

17.5

A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-

70

Inverse diode forward voltage

VGS = 0 V, IF = 35 A

VSD

-

1.15

1.8

V

Reverse recovery time

VR = 30 V, IF=lS, diF/dt = 100 A/µs

trr

-

35

-

ns

Reverse recovery charge

VR = 30 V, IF=lS, diF/dt = 100 A/µs

Qrr

-

0.04

-

µC

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BUZ104 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

BUZ104 Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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