BUZ104 datasheet(3/9 Pages) SIEMENS

Part #	BUZ104

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 9 page

Semiconductor Group

3

07/96

BUZ 104

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 12.5 A

gfs

4

7.5

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

350

470

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

140

210

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

60

90

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(on)

-

10

15

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tr

-

30

45

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(off)

-

50

65

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tf

-

40

55

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BUZ104 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

BUZ104 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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