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BUZ104 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # BUZ104
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ104 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
07/96
BUZ 104
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID, Tj = -40 °C
V(BR)DSS
50
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
2.1
3
4
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
10
1
0.1
100
100
1
µA
nA
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 12.5 A
RDS(on)
-
0.07
0.1
Ω


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