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BUZ104 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part # BUZ104
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ104 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
07/96
BUZ 104
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• d
v/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 104
50 V
17.5 A
0.1
Ω
TO-220 AB
C67078-S1353-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 29 °C
ID
17.5
A
Pulsed drain current
TC = 25 °C
IDpuls
70
Avalanche energy, single pulse
ID = 17.5 A, VDD = 25 V, RGS = 25 Ω
L = 114 µH, Tj = 25 °C
EAS
35
mJ
Reverse diode d
v/dt
IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
d
v/dt
6
kV/µs
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot
60
W
Operating temperature
Tj
-55 ... + 175
°C
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, chip case
RthJC
≤ 2.5
K/W
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 175 / 56


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