BUZ104 datasheet(7/9 Pages) SIEMENS

Part #	BUZ104

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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7 / 9 page

7

07/96

Semiconductor Group

BUZ 104

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter:

V

GS = VDS, ID = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60

-20

20

60

100

°C

180

T

j

2%

typ

98%

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter:

ID = 12.5 A, VGS = 10 V

-60

-20

20

60

100

°C

180

T

j

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

Ω

0.28

R

DS (on)

typ

98%

Typ. capacitances

C = f (VDS)

parameter:

VGS = 0V, f = 1MHz

0

5

10

15

20

25

30

V

40

V

DS

1

10

2

10

3

10

4

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter:

Tj, tp = 80 µs

-1

10

0

10

1

10

2

10

A

I

F

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V

3.0

V

SD

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 175 °C typ

T

j = 175 °C (98%)

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BUZ104 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

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