BUZ104 datasheet(6/9 Pages) SIEMENS

Part #	BUZ104

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 9 page

Semiconductor Group

6

07/96

BUZ 104

Typ. output characteristics

ID = ƒ(VDS)

parameter:

t

p = 80 µs

0.0

1.0

2.0

3.0

4.0

V

6.0

V

DS

0

4

8

12

16

20

24

28

32

A

40

I

D

V

GS

[V]

a

4.0

b

4.5

c

5.0

d

5.5

e

6.0

f

6.5

g

7.0

h

7.5

i

8.0

j

9.0

k

10.0

l

Ptot = 60W

l

20.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter:

V

GS

0

4

8

12

16

20

24

A

32

I

D

0.00

0.04

0.08

0.12

0.16

0.20

0.24

Ω

0.32

R

DS (on)

VGS [V] =

a

4.0

VGS [V] =

a

4.5

b

5.0

c

5.5

d

6.0

e

6.5

f

7.0

g

7.5

h

8.0

i

9.0

j

10.0

k

20.0

Typ. transfer characteristics

ID = f (VGS)

parameter:

tp = 80 µs

VDS≥2 x ID x RDS(on)max

0

1

2

3

4

5

6

7

8

V

10

V

GS

0

5

10

15

20

25

30

A

40

I

D

Typ. forward transconductance

gfs = f (ID)

parameter:

tp = 80 µs,

VDS≥2 x ID x RDS(on)max

0

5

10

15

20

25

A

35

I

D

0

1

2

3

4

5

6

7

8

S

10

g

fs

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BUZ104 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

BUZ104 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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