BTS133 datasheet(4/10 Pages) SIEMENS

Part #	BTS133

Description	Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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4 / 10 page

13.07.1998

Semiconductor Group

Page 4

BTS 133

Electrical Characteristics

Parameter

Symbol

Values

Unit

at Tj=25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Initial peak short circuit current limit

VIN = 10 V, VDS = 12 V

ID(SCp)

-

65

-

A

Current limit 1)

VIN = 10 V, VDS = 12 V, tm = 350 µs,

Tj = -40...+150 °C

ID(lim)

21

28

40

Dynamic Characteristics

µs

ton

Turn-on time

VIN to 90% ID:

RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V

40

100

--

Turn-off time

VIN to 10% ID:

RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V

--

toff

70

170

V/µs

Slew rate on

70 to 50%

Vbb:

RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V

-dVDS/dton

3

1

--

Slew rate off

50 to 70%

Vbb:

RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V

1

3

dVDS/dtoff

--

Protection Functions

Tjt

°C

Thermal overload trip temperature

165

-

150

EAS

Unclamped single pulse inductive energy

ID = 7 A, Tj = 25 °C, Vbb = 32 V

ID = 7 A, Tj = 150 °C, Vbb = 32 V

-

2000

450

mJ

Inverse Diode

VSD

Inverse diode forward voltage

IF = 5*7A, tm = 300 µs, VIN = 0 V

1.08

-

V

1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values

might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition

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