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V30150C Datasheet(PDF) 2 Page - Vishay Siliconix |
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V30150C Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page ![]() New Product V30150C, VF30150C, VB30150C & VI30150C Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89047 Revision: 24-Jun-09 2 Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 150 (minimum) - V Instantaneous forward voltage per diode (1) IF = 5 A IF = 7.5 A IF = 15 A TA = 25 °C VF 0.72 0.81 1.11 - - 1.36 V IF = 5 A IF = 7.5 A IF = 15 A TA = 125 °C 0.56 0.61 0.71 - - 0.79 Reverse current per diode (2) VR = 100 V TA = 25 °C TA = 125 °C IR 1.5 2 - - µA mA VR = 150 V TA = 25 °C TA = 125 °C - 4 200 20 µA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30150C VF30150C VI30150C VI30150C UNIT Typical thermal resistance per diode RθJC 2.2 4.5 2.2 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30150C-E3/4W 1.89 4W 50/tube Tube ITO-220AB VF30150C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30150C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30150C-E3/4W 1.46 4W 50/tube Tube Figure 1. Maximum Forward Current Derating Curve Case Temperature (°C) 40 30 0 0 25 50 75 100 125 150 175 V(B,I)30150C Resistive or Inductive Load Mounted on Specific Heatsink 20 10 VF30150C Figure 2. Forward Power Loss Characteristics Per Diode 0 2 6 14 02 8 12 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 6 4 10 10 4 12 8 16 14 18 D = t p/T t p T |
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