2SC4098 datasheet(1/1 Pages) HTSEMI

Part #	2SC4098

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR (NPN)

FEATURES

 Low Collector Capacitance

 High Gain

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

50

mA

PC

Collector Power Dissipation

200

mW

RΘJA

Thermal Resistance From Junction To Ambient

625

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=50µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=24V, IE=0

500

nA

Emitter cut-off current

IEBO

VEB=3V, IC=0

500

nA

DC current gain

hFE

VCE=6V, IC=1mA

56

270

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB=1mA

0.3

V

Transition frequency

fT

VCE=6V,Ic=1mA ,f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=6V, IE=0, f=1MHz

2.2

pF

CLASSIFICATION OF hFE

RANK

N

P

Q

RANGE

56–120

82–180

120–270

MARKING

AN

AP

AQ

SOT–323

1. BASE

2. EMITTER

3. COLLECTOR

１　

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2SC4098

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