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BF799 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BF799 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page Semiconductor Group 2 BF 799 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Unit Values Parameter Symbol min. typ. max. DC Characteristics V Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 20 – – nA Collector cutoff current VCB = 20 V ICB0 – – 100 – DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA hFE 35 40 95 100 – 250 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR) CB0 30 – – Emitter-base breakdown voltage IE = 10 µA V(BR) EB0 3–– V Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA VCE sat – 0.15 0.5 Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBE sat – – 0.95 MHz Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz fT – – 800 1100 – – pF Output capacitance VCB = 10 V, f = 1 MHz, IE = 0 Cob – 0.96 – Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.7 – µS Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e –60 – dB Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 50 Ω F –3– Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.28 – AC Characteristics |
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