BF550 datasheet(2/5 Pages) SIEMENS

Part #	BF550

Description	PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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BF 550

Semiconductor Group

2

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

AC Characteristics

V

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR) CE0

40

–

Collector-base breakdown voltage

IC = 10

µA, IE = 0

V(BR) CB0

40

–

Emitter-base breakdown voltage

IE = 10

µA, IC = 0

V(BR) EB0

4––

nA

Collector cutoff current

VCB = 30 V, IE = 0

ICB0

–

100

–

DC current gain

IC = 1 mA, VCE = 10 V

hFE

50

–

250

V

Base-emitter voltage

IC = 1 mA, VCE = 10 V

VBE

–

0.72

–

MHz

Transition frequency

IC = 1 mA, VCE = 10 V, f = 100 MHz

fT

–

350

–

pF

Collector-base capacitance

VCB = 10 V, VBE = 0 V, f = 1 MHz

Ccb

–

0.33

–

Collector-emitter capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Cce

–

0.67

–

dB

Noise figure

VCE = 10 V

IC = 1 mA, f = 100 kHz, RS = 300

Ω

IC = 2 mA, f = 100 MHz, RS = 60

Ω

F

–

2

3.4

–

µS

pF

mS

pF

µS

f = 0.45 … 10 MHz

f = 500 kHz

f = 10 MHz

g11e

C11e

I y21e I

C22e

g22e

–

550

17

35

1.3

5

–

8

10

Y parameters, common emitter

IC = 1 mA, VCE = 10 V

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