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BF550 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BF550 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 5 page ![]() Semiconductor Group 1 PNP Silicon RF Transistor BF 550 q For common emitter amplifier stages up to 300 MHz q For mixer applications in AM/FM radios and VHF TV tuners q Low feedback capacitance due to shield diffusion q Controlled low output conductance Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BF 550 Q62702-F944 LA SOT-23 1 2 3 B E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Thermal Resistance Junction - ambient2) Rth JA ≤ 450 K/W Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Base current IB 5 Junction temperature Tj 150 ˚C Collector current IC 25 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 07.94 |
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