BF543 datasheet(2/5 Pages) SIEMENS

Part #	BF543

Description	Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

V

nA

Parameter

Drain-source breakdown voltage

ID = 10

µA, – VGS = 4 V

Gate-source breakdown voltage

± IGS = 10 mA, VDS = 0

Gate cutoff current

± VGS = 6 V, VDS = 0

Symbol

V(BR)DS

±V(BR)GSS

± IGSS

min.

20

7

–

typ.

–

max.

–

12

50

mA

Drain current

VDS = 10 V, VGS = 0

IDSS

2.0

4

6.0

V

Gate-source pinch-off voltage

VDS = 10 V, ID = 20

µA

– VGS(p)

–

0.7

1.5

DC Characteristics

mS

Forward transconductance

VDS = 10 V, ID = 4 mA, f = 1 kHz

gfs

9.5

12

–

pF

Gate-1 input capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Cgss

–

2.7

–

fF

Reverse transfer capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Cdg

–18

–

dB

Power gain (test circuit)

VDS = 10 V, ID = 4 mA, f = 200 MHz

GG = 2 mS, GL = 0.5 mS

Gp

–22

–

pF

Output capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Cdss

–

0.9

–

Noise figure (test circuit)

VDS = 10 V, ID = 4 mA, f = 200 MHz

GG = 2 mS, GL = 0.5 mS

F

–1–

AC Characteristics

BF 543

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BF543 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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