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W9412G2IB Datasheet(PDF) 27 Page - Winbond

Part # W9412G2IB
Description  1M 횞 4 BANKS 횞 32 BITS GDDR SDRAM
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Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond

W9412G2IB Datasheet(HTML) 27 Page - Winbond

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W9412G2IB
Publication Release Date: Aug. 30, 2010
- 27 -
Revision A06
9.5 DC Characteristics
MAX.
SYM.
PARAMETER
-4
-5/-5I
-6/-6I
UNIT NOTES
IDD0
Operating current: One Bank Active-Precharge; tRC = tRC min;
tCK = tCK min; DQ, DM and DQS inputs changing twice per
clock cycle; Address and control inputs changing once per
clock cycle
160
150
140
mA
7
IDD1
Operating current: One Bank Active-Read-Precharge; Burst =
2; tRC = tRC min; CL = 3; tCK = tCK min; IOUT = 0 mA; Address
and control inputs changing once per clock cycle.
180
170
160
mA
7, 9
IDD2P
Precharge Power Down standby current: All Banks Idle; Power
down mode; CKE < VIL max; tCK = tCK min; Vin = VREF for DQ,
DQS and DM
30
30
30
mA
IDD2N
Idle standby current: CS > VIH min; All Banks Idle; CKE > VIH
min; tCK = tCK min; Address and other control inputs changing
once per clock cycle; Vin > VIH min or Vin < VIL max for DQ,
DQS and DM
45
45
45
mA
7
IDD3P
Active Power Down standby current: One Bank Active; Power
down mode; CKE < VIL max; tCK = tCK min
30
30
30
mA
IDD3N
Active standby current: CS > VIH min; CKE > VIH min; One
Bank Active-Precharge; tRC = tRAS max; tCK = tCK min; DQ, DM
and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
60
60
60
mA
7
IDD4R
Operating current: Burst = 2; Reads; Continuous burst; One
Bank Active; Address and control inputs changing once per
clock cycle; CL=3; tCK = tCK min; IOUT = 0mA
240
220
200
mA
7, 9
IDD4W
Operating current: Burst = 2; Write; Continuous burst; One
Bank Active; Address and control inputs changing once per
clock cycle; CL = 3; tCK = tCK min; DQ, DM and DQS inputs
changing twice per clock cycle
270
250
230
mA
7
IDD5
Auto Refresh current: tRC = tRFC min
210
200
190
mA
7
IDD6
Self Refresh current: CKE < 0.2V
3
3
3
mA
IDD7
Random Read current: 4 Banks Active Read with activate
every 20nS, Auto-Precharge Read every 20 nS; Burst = 4; tRCD
= 3; IOUT = 0mA; DQ, DM and DQS inputs changing twice per
clock cycle; Address changing once per clock cycle
340
320
300
mA


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