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BAR64 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BAR64 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page BAR 64... Semiconductor Group 2 Edition A01, 23.02.95 Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC characteristics per diode Breakdown voltage IR = 5 µA V(BR) 200 - - V Forward voltage IF = 50 mA VF - - 1.1 V Diode capacitance VR = 20 V, f = 1 MHz CT - 0.23 0.35 pF Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz rf - -- 12.5 2.1 0.85 20 3.8 1.35 Ω Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA τL - 1.55 - µs Series inductance Ls - 1.4 - nH Forward current rF= f (TS;TA*) * mounted on alumina BAR64 Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 I F mA T T A S T T A S I F mA T T A S T T A S |
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