BDV66B datasheet(1/2 Pages) ISC

Part #	BDV66B

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDV66/A/B/C

DESCRIPTION

·Collector Current -IC= -16A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -2.0V(Max.)@ IC= -10A

·Complement to Type BDV67/A/B/C

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDV66

-80

BDV66A

-100

BDV66B

-120

VCBO

Collector-Base

Voltage

BDV66C

-140

V

BDV66

-60

BDV66A

-80

BDV66B

-100

VCEO

Collector-Emitter

Voltage

BDV66C

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-16

A

ICM

Collector Current-Peak

-20

A

IB

B

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@ TC=25℃

175

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.625

℃/W

isc Website：www.iscsemi.cn

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