For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

8

8 - 1

MMIC VCO w/ HALF FREQUENCY OUTPUT

14.5 - 15.0 GHz

v01.0209

General Description

Features

Functional Diagram

The HMC736LP4(E) is a GaAs InGaP Heterojunction

Bipolar

Transistor

(HBT)

MMIC

VCO.

The

HMC736LP4(E) integrates a resonator, negative

resistance device, varactor diode and feature half

frequency output. The VCO’s phase noise performance

is excellent over temperature, shock, and process due

to the oscillator’s monolithic structure. Power output

is +9 dBm typical from a +4.2V supply voltage. The

voltage controlled oscillator is packaged in a leadless

QFN 4x4 mm surface mount package, and requires no

external matching components.

Dual Output: Fo = 14.5 - 15.0 GHz

Fo/2 = 7.25 - 7.5 GHz

Pout: +9 dBm

Phase Noise: -105 dBc/Hz @ 100 kHz

No External Resonator Needed

Typical Applications

The HMC736LP4(E) is ideal for:

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• SATCOM

• Military End-Use

Parameter

Min.

Typ.

Max.

Units

Frequency Range

Fo

Fo/2

14.5 - 15.0

7.25 - 7.5

GHz

GHz

Power Output

RFOUT

RFOUT/2

6

-8

9

-3

13

2

dBm

dBm

SSB Phase Noise @ 100 kHz Offset,

Vtune= +5V @ RFOUT

-105

dBc/Hz

Tune Voltage

Vtune

1

13

V

Supply Current

120

150

180

mA

Tune Port Leakage Current (Vtune= 13V)

10

µA

Output Return Loss

2.5

dB

Harmonics/Subharmonics

1/2

3/2

-45

-42

dBc

dBc

Pulling (into a 2.0:1 VSWR)

12

MHz pp

Pushing @ Vtune= 5V

24

MHz/V

Frequency Drift Rate

1.2

MHz/°C