11

11 - 14

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

General Description

Features

Functional Diagram

The HMC385LP4 & HMC385LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with

integrated

resonators,

negative

resistance

devices,

varactor

diodes,

and

buffer

amplifiers.

Covering 2.25 to 2.5 GHz, the VCO’s phase noise

performance is excellent over temperature, shock,

vibration and process due to the oscillator’s monolithic

structure. Power output is 4.5 dBm typical from a

single supply of 3V @ 35mA. The voltage controlled

oscillator is packaged in a low cost leadless QFN

4x4 mm surface mount package.

Pout: +4.5 dBm

Phase Noise: -115 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 35 mA

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier for:

• Wireless Infrastructure

• Industrial Controls

• Test Equipment

• Military

Parameter

Min.

Typ.

Max.

Units

Frequency Range

2.25 - 2.5

GHz

Power Output

1.5

4.5

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-115

dBc/Hz

Tune Voltage (Vtune)

0

10

V

Supply Current (Icc) (Vcc = +3.0V)

35

mA

Tune Port Leakage Current

10

μA

Output Return Loss

9dB

Harmonics

2nd

3rd

-7

-23

dBc

dBc

Pulling (into a 2.0:1 VSWR)

2.0

MHz pp

Pushing @ Vtune= +5V

-2

MHz/V

Frequency Drift Rate

0.25

MHz/°C

MMIC VCO w/ BUFFER

AMPLIFIER, 2.25 - 2.5 GHz

v02.0705