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PT501 Datasheet(PDF) 1 Page - Sharp Corporation |
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PT501 Datasheet(HTML) 1 Page - Sharp Corporation |
1 / 4 page ![]() PT501/PT510 s Outline Dimensions s Absolute Maximum Ratings ( Ta = 25˚C) s Electro-optical Characteristics ( Ta = 25˚C) Acceptance Phototransistor s Features s Applications 1. Optoelectronic switches, optoelectronic counters 2. Smoke detectors 3. Infrared applied systems PT501/PT510 PT510 Glass lens 2.5 Glass lens 2.5 PT501 1 3 2 2 3 1 1.0 45˚ 1.0 45˚ 1 1 Collector (Case) 2 Base 3 Emitter 1 Collector 1 2 Emitter 2 2 1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 3. With base terminal : PT510 *1 For 10 seconds at the position of 1.3mm from the bottom face of can package Parameter Symbol Conditions MIN. TYP. MAX. Unit *2Collector current IC 2.5 PT501 10 -mA PT510 20 Collector dark current ICEO VCE = 30V, Ee =0 - 2 x10 -9 10-7 A *2Collector-emitter saturation voltage VCE (sat) IC = 10mW/cm2 - 0.2 - V Peak sensitivity wavelength λP - 800 - nm Response time Rise time t r V CE = 2V, I C = 2mA, - PT501 10 - µs PT510 2 Fall time tf - PT501 10 - µs PT510 3 TO-18 Type Narrow data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, VCE = 5V, E e= 10mW/cm2 Parameter Symbol PT501 PT510 Unit Collector-emitter voltage V CEO 45 35 V Emitter-collector voltage V ECO 66 V Collector-base voltage V CBO -35 V Emitter-base voltage V EBO -6 V Collector power dissipation P C 75 75 mW Operating temperature T opr - 25 to + 125 - 25 to + 125 ˚C Storage temperature T stg - 55 to + 150 - 55 to + 150 ˚C *1 Soldering temperature T sol 260 260 ˚C ( Unit : mm ) RL = 100 Ω (PT501 :1kΩ ) *2 E e : Irradiance by CIE standard light source A ( tungsten lamp) 2. TO -18 type standard package = 1mA, E e φ 0.45 φ 0.45 φ 2.5 φ5.7MAX. φ5.7MAX. φ 4.7±0.1 φ 4.7±0.1 |
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