2N6660CSM4

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be

both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab

encourages customers to verify that datasheets are current before placing orders.

DOC 7777, ISSUE 2

FEATURES

•

Faster switching

•

Low Ciss

•

Integral Source-Drain Diode

•

High Input Impedance and High Gain

DESCRIPTION

This enhancement-mode (normally-off) vertical DMOS FET is

ideally suited to a wide range of switching and amplifying

applications where high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Hi-Reliability Military and Space screening options available

N–CHANNEL

ENHANCEMENT MODE

MOSFET

V

DSS

60V

I

D

1.0A

R

DS(on)

3.0

Ω

LCC3 PACKAGE (MO-041BA)

(Underside View)

PAD 1 – DRAIN

PAD 3 – SOURCE

PAD 2 – N/C

PAD 4 – GATE

1

2

3

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

MECHANICAL DATA

Dimensions in mm (inches)

V

DS

Drain - Source Voltage

60V

I

D

Drain Current

- Continuous (T

1.0A

I

DM

Drain Current

3A

V

GS

Gate - Source Voltage

±20V

P

tot(1)

Total Power Dissipation at T

3.0W

De-rate Linearly above 25°C

0.020W/°C

P

tot(2)

Total Power Dissipation at T

0.5W

T

Operating and Storage Junction Temperature Range

-55 to +175°C

THERMAL DATA

R

thj-mb

Thermal Resistance Junction – Mounting base

Max

50

°C/W

NOTES:

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width ≤ 300µS, Duty Cycle , δ 2%