© Semiconductor Components Industries, LLC, 2010

August, 2010 − Rev. 7

1

Publication Order Number:

MPSW42/D

MPSW42

One Watt High Voltage

Transistor

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

300

Vdc

Collector−Base Voltage

300

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

500

mAdc

Derate above 25°C

1.0

8.0

W

mW/°C

Derate above 25°C

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

125

°C/W

Thermal Resistance, Junction−to−Case

50

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MPSW42RLRA

TO−92

2000/Tape & Reel

MPSW42RLRAG

TO−92

(Pb−Free)

2000/Tape & Reel

Device

Package

MPSW42

TO−92

5000 Units/Box

MPSW42G

TO−92

(Pb−Free)

5000 Units/Box

MPSW42 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

MARKING DIAGRAM

MPS

W42

AYWW G

G

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1