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SSG4403 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4403 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ Ω Ω Ω 29-Oct-2009 Rev. B Page 1 of 3 A H B M D C J K F L E N G 4403SC 1 S S S G D D D D = Date Code 2 3 4 5 6 7 8 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 3 ID @Ta=25℃ -6.1 A Continuous Drain Current 3 ID @Ta=70℃ -5.1 A Pulsed Drain Current 1 IDM -60 A Total Power Dissipation PD @Ta=25℃ 2.5 W Linear Derating Factor 0.02 W/℃ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃ THERMAL DATA Thermal Resistance Junction-ambient 3 Max. Rθj-amb 50 ℃/W P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250µA Gate Threshold Voltage VGS(th) -0.7 - -1.3 V VDS=VGS, ID=-250µA Forward Transconductance gfs - 11 - S VDS=-5V, ID=-5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25℃) - - -1 µA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=55℃) IDSS - - -5 µA VDS=-24V, VGS=0 - - 50 VGS=-10V, ID=-6.1A - - 61 VGS=-4.5V, ID=-5A Static Drain-Source On-Resistance 2 RDS(ON) - - 117 m VGS=-2.5 V, ID=-1 A Total Gate Charge 2 Qg - 9.4 - Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 3 - nC ID=-5 A VDS=-15 V VGS=-4.5 V Turn-on Delay Time 2 Td(on) - 7.6 - Rise Time Tr - 8.6 - Turn-off Delay Time Td(off) - 44.7 - Fall Time Tf - 16.5 - ns VDS=-15 V ID=-10 V RG=6 RL=2.4 Input Capacitance Ciss - 940 - Output Capacitance Coss - 104 - Reverse Transfer Capacitance Crss - 73 - pF VGS=0 V VDS=-15 V f=1.0 MHz SOURCE-DRAIN DIODE Forward On Voltage 2 VSD - - -1.0 V IS=-1A, VGS=0 V Continuous Source Current (Body Diode) IS - - -4.2 A Reverse Recovery Time 2 Trr - 22.7 - ns Reverse Recovery Charge Qrr - 15.9 - nC IS = -5A, VGS = 0V, dl/dt = 100A/µs Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface Mounted on 1 in 2 copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. Source Drain Gate |
Similar Part No. - SSG4403_09 |
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Similar Description - SSG4403_09 |
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