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2N7002 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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2N7002 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 4 page  2009. 11. 17 1/4 SEMICONDUCTOR TECHNICAL DATA 2N7002 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Revision No : 4 INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1. SOURCE 2. GATE 3. DRAIN SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P 7 + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Current Continuous ID 300 mA Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. Type Name Marking Lot No. WA EQUIVALENT CIRCUIT Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm 2 1mm) |
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