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SEF105M Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SEF105M Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  SEF101M~SEF107M VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente 09-Feb-2011 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Part Number Unit Testing Condition SEF 101M SEF 102M SEF 103M SEF 104M SEF 105M SEF 106M SEF 107M Forward Voltage (Max.) VF 1 1.3 1.7 V Average Forward Rectified Current (Max.) IO 1 A Ambient Temperature =50°C Forward Surge Current IFSM 30 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) DC Reverse Current at Rated DC Blocking Voltage (Max.) IR 5 A VR=VRRM, TA=25°C 150 VR=VRRM,TA=100°C Thermal Resistance Junction to Ambient (Typ.) RJA 42 °C/W Diode Junction Capacitance (Typ.) CJ 20 pF f=1MHz and applied 4V DC reverse voltage Storage and Operating Temperature Range TSTG, TJ -65 ~ 175, -55 ~ 150 °C Reverse recovery time TRR 50 75 nS Note: 1. Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A. |
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