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TLE8250G Datasheet(PDF) 14 Page - Infineon Technologies AG |
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TLE8250G Datasheet(HTML) 14 Page - Infineon Technologies AG |
14 / 23 page Data Sheet 14 Rev. 1.0, 2010-06-02 TLE8250G Electrical Characteristics 7 Electrical Characteristics 7.1 Functional Device Characteristics Table 6 Electrical Characteristics 4.75 V < V CC < 5.25 V; RL = 60 Ω; Tj = -40 °C to +150 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Pos. Parameter Symbol Limit Values Unit Remarks Min. Typ. Max. Current Consumption 7.1.1 Current consumption ICC – 6 10 mA “Recessive” state; VTxD = VCC 7.1.2 Current consumption ICC – 45 70 mA “Dominant” state; VTxD = 0 V 7.1.3 Current consumption ICC(ROM) – 6 10 mA Receive-Only mode NRM = “Low” 7.1.4 Current consumption ICC(STB) –7 15 µA Stand-By mode; TxD = NRM = “High” Supply Resets 7.1.5 V CC under-voltage monitor V CC(UV) 1.3 3.2 4.3 V – 7.1.6 V CC under-voltage monitor hysteresis V CC(UV,H) – 200 – mV 1) 7.1.7 V CC under-voltage blanking time t blank(UV) –15 – µs 1) Receiver Output: RxD 7.1.8 HIGH level output current IRD,H –-4 -2 mA VRxD = 0.8 × VCC VDIFF < 0.5 V 7.1.9 LOW level output current IRD,L 24 – mA VRxD = 0.2 × VCC VDIFF > 0.9 V Transmission Input: TxD 7.1.10 HIGH level input voltage threshold VTD,H –0.5 × V CC 0.7 × V CC V “Recessive” state 7.1.11 LOW level input voltage threshold VTD,L 0.3 × V CC 0.4 × V CC – V “Dominant” state 7.1.12 TxD pull-up resistance RTD 10 25 50 k Ω – 7.1.13 TxD input hysteresis VHYS(TxD) – 200 – mV 1) 7.1.14 TxD permanent dominant disable time tTxD 0.3 – 1.0 ms – Not Enable Input NEN 7.1.15 HIGH level input voltage threshold V NEN,H –0.5 × V CC 0.7 × V CC V Stand-By mode; 7.1.16 LOW level input voltage threshold V NEN,L 0.3 × V CC 0.4 × V CC – V Normal Operation mode; 7.1.17 NEN pull-up resistance R NEN 10 25 50 k Ω – 7.1.18 NEN input hysteresis VHYS(NEN) – 200 – mV 1) |
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