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2SC1318A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1318A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 19-Jan-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Collector output capacitance： Cob=11 pF (TYP), 20 pF (MAX) CLASSIFICATION OF hFE(1) Product-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S Range 85~170 120~240 170~340 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 70 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 80 - - V IC= 10μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 70 - - V IC= 2mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE= 10μA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μA VCB= 20V, IE=0 DC Current Gain hFE(1) 85 - 340 VCE= 10V, IC= 0.15A hFE(2) 40 - - VCE= 10V, IC= 0.5A Collector to Emitter Saturation Voltage VCE(sat) - - 0.6 V IC= 300mA, IB= 30mA Base to Emitter Voltage VBE(sat) - - 1.5 V IC= 300mA, IB= 30mA Transition Frequency fT - 120 - MHz VCE= 10V, IC= 50mA, f=200MHz Collector Output Capacitance Cob - 11 20 pF VCB= 10V, IE=0, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J Emitter Collector Base |
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